| 摘要 |
PURPOSE:To obtain the BeO thin film with stable characteristics, by clusterizing high pressure Be vapor jetted in the bell jar under high vacuum, in manufacturing the elastic surface wave element for piezoelectric conversion, and reacting it with the oxygen introduced. CONSTITUTION:The tightly closed type crusible 21 with Be 23 in it and the base holder 22 fixing the substrate 24 providing the interdigital electrode are located in the bell jar 20 under high vacuum. When the crucible 21 is heated and Be 23 at hightly pressurized vapor is jetted in the bell jar 20, the vapor of Be goes toward the substrate 24 and it is over-cooled to form the cluster 25. When the atoms of Be collides with the substrate 24, Be becomes BeO with the reaction with the oxygen introduced in the bell jar 20, the BeO crystal grows on the substrate 24 masked 28 to form the thin film. A part of the cluster 25 is ionized with thermal electrons emitted from the electrode 26, and acceleration control is made with the potential of the electrode 27. Thus, the emission speed to the substrate 24 can be adjusted. |
