发明名称 PATTERN FORMING
摘要 PURPOSE:To obtain a micropattern by overlapping a photoresist film on a photosensitized photoresist film and subjecting them to exposure and development. CONSTITUTION:An aluminum film 2 is adhered to a SiO2 sheet 1, and then is coated with a photoresist 4. After this process, an ultraviolet ray is exposed to the said photoregist. Next, a photoresist 5 is applied and is exposed holographically to a laser beam. A regist film forms a diffraction grating pattern 6 on the surface of the aluminum film after development process. Since the resist film 4 is exposed beforehand, a residual resist is not left in a valley of the diffraction grating pattern on account of a flickering light. If gold 2 is etched by the mask 6 in an argon ion atmosphere, an extremely fine pattern can be obtained.
申请公布号 JPS56137634(A) 申请公布日期 1981.10.27
申请号 JP19800041691 申请日期 1980.03.29
申请人 RIKAGAKU KENKYUSHO 发明人 NANBA SUSUMU;MATSUI SHINJI;ARITOME HIROAKI;MORIWAKI KAZUYUKI
分类号 H01L29/73;G02B5/18;G03F7/20;G03F7/26;H01L21/027;H01L21/30;H01L21/302;H01L21/3065;H01L21/331 主分类号 H01L29/73
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