| 摘要 |
PURPOSE:To contrive to make an oscillation frequency high in precision by a method wherein an active layer is formed with a groove and the oscillation frequency is determined according to a width of the active layer cut by the groove. CONSTITUTION:The N type active layer 12 of low impurity concentration is applied by a epitaxial vapor growth on a GaAs substrate 11 of high specific resistance, and high concentration crystalline layers 13, 14 of N<+> type higher in the impurity concentration than the active layer 12 are formed on the active layer 12. Electrode layers 15, 15' are formed on the high density crystalline layers 13, 14. Further, a shallow groove 16 and a deep groove 16' dividing the electrodes 15, 15' in two are formed between the electrodes 15, 15', and those two grooves 16, 16' have the respective bottoms within the N type active layer 12 in order to keep from passing through the N type active layer 12. Further, the side surfaces of the high density crystalline layers 13, 14 and the active layer 12 on which the both electrodes 15, 15' are mounted are made the mesa type structures. |
