| 摘要 |
PURPOSE:To generate the far infrared ray without requiring a light source for incidence by a method wherein the electromagnetic wave corresponding to quantum energy of optical phonon is positively fedback, and a current is flowed to a semiconductor. CONSTITUTION:Electrodes 4, 5 are fitted to a GaP crystal 3 to flow currents from a DC power source 6 thereto. Reflectors 1, 2 are arranged on both sides of the GaP crystal 3. With the propagation of the phonon of a polariton mode throughout the GaP crystal, the currents are flowed to cause collision ionization to treansit electrons of an impurity excited at a high energy level to a low energy level. Thereby, the phonon is discharged and the phonon of the polariton mode is discharged and amplified. |
