| 摘要 |
PURPOSE:To obtain the diode excellent in electrical activation of an impurity in an ion-implanted layer and in a low dark current by a method wherein the N type germanium is implanted with indium ions and then, anneal-treated in an inert atmosphere. CONSTITUTION:The N type germanium is implanted with the indium ions and then, anneal-treated at 450-650 deg.C in the inert atmosphere. The indium impurity is doped by an ion implantation method capable of controlling an ion distribution by controlling the acceleration voltage and the amt. of the ions to be implanted, so that the implanted layer can form a P-N junction excellent in controlability and uniformity. |
