发明名称 |
PRODUCTION OF THIN FILM BY SPUTTERING |
摘要 |
PURPOSE:To obtain a thin film excellent in the photoelectric and optical properties for a higher frequency sputtering by molding an inorganic material into a target under pressure at a low temperature with no binder. CONSTITUTION:A powdered material of an inorganic substance is molded into a target 3 under pressure at a normal temperature or a temperature range free from chemical change with no binder. The target 3 is placed on a cathode 2 in a vacuum discharge box 1 while a glass substrate 5 is fixed on an anode 4. A high frequency discharging is performed between the cathode 2 and the anode 4 by a high frequency power source 8 to form a sputtering film 6 on the substrate 5. This keeps the target 3 from mixture with impurities and chemical changes thereby providing a thin film highly excellent in the photoelectric and optical properties. |
申请公布号 |
JPS56134729(A) |
申请公布日期 |
1981.10.21 |
申请号 |
JP19800038604 |
申请日期 |
1980.03.25 |
申请人 |
MIYAKE SEIJI;NARUMI CHINA CORP |
发明人 |
MIYAKE SEIJI;MIYATA NAOYUKI;UNO KOUICHI |
分类号 |
C23C14/34;C23C14/40;H01L21/203;H01L21/31 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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