| 摘要 |
PURPOSE:To provide an accurate estimation for a performance of IC by a method wherein a monitoring bipolar transistor having an emitter layer with a width similar to a minimum width of emitter of the transistors in IC is arranged and its hFE is measured. CONSTITUTION:When an emitter layer of a bipolar transistor is made under a dispersion from a doped poly-Si, hFE is decreased as its width is decreased if the emitter width is less than 5mum. Then, if a monitoring bipolar transistor having an emitter layer with its width similar to a minimum emitter width of the transistor formed in IC is provided to measure its hFE, a lower limit value of hFE of the bipolar transistor in IC may be assured, a performance of IC may accurately be evaluated. |
