| 摘要 |
PURPOSE:To obtain a sufficient conversion gain over a ultra-high frequency band by applying two input signals, differing in frequency, to the 1st gate and source of dual-gate FET and by obtaining an output signal from the 2nd gate. CONSTITUTION:Two input signals of frequencies F1 and F2 applied to input signal terminal IN are given a 180 deg. phase shift through hybrid circuit HB1 and inputted to dual-gate FETs 1 and 2. To drains D of FETs 1 and 2, resistance elements R and capacitors C and connected as terminal loads, and sources S are grounded. Then, outputs of the 2nd gates G2 are coupled together in phase by hybrid circuit HB2. Thus, a conversion gain enough for practical use can be obtained even in a high frequency band, e.g. at 20GHz. |
