| 摘要 |
PURPOSE:To form an active layer having preferable crystallinity by growing the III-V Group semiconductor layer in the Periodic Table containing non P on the first semiconductor layer containing P provided on a substrate and isolating the first semiconductor layer from the growing atmosphere. CONSTITUTION:After a semiconductor layer InGaAlP layer 11 containing P becoming an active layer is grown on a GaAs substrate 10, a semiconductor layer GaAs layer 12 containing non P is matched at lattice therewith and grown, and Zn or the like is diffused via the layer 12 in the layer 11, thereby form a P-N junction. Thus, since the layer 11 is isolated from the growing atmosphere, the P does not remove from the surface to become rough, but the active layer having preferably crystallinity can be obtained. |
