| 摘要 |
PURPOSE:To decrease an interface level density existing on the interface and form an stabilized and excellent semiconductor device by a method wherein an ion-injection of Mg, Ca, Ti or Zn is applied to the interface of an insulating film formed on the semiconductor substrate surface and the semiconductor substrate. CONSTITUTION:An SiO2 film and an Si3N4 film are selectively formed on the P type Si substrate 1 and heat-treated in an oxidation atmosphere to form a field oxidation film 4, and then, the surface covered with the oxidation film or the like is slightly oxidized to form a thin (e.g. 500-1,000Angstrom ) SiO2 film and then, at least one element picked out of the Mg, Ca, Ti and Zn is ion-implanted into the interface of the substrate 1 and the SiO2 films 4, 5 to form an ion-implanted region 6 and then anealed. Whereby the interface level density on the semiconductor surface to be formed with channels thereon is made zero to enable the semiconductor device of MOSIC excellent in characteristic. |
