| 摘要 |
PURPOSE:To reduce the capacity of a depletion layer and facilitate matching with a circuit while increasing output power by utilizing not only electrons tunnel-injected but also holes. CONSTITUTION:An n type layer 2, impurity density thereof is lower than an n<+> type semiconductor layer 1, a p type layer 31 and a p<+> type layer 32, impurity density thereof is higher than the p type layer 31, are formed on the n<+> type layer 1 with high impurity density. Desirably, Ge is 1X10<17>cm<-3> or higher, Si 3X10<17>cm<-3> or higher and GaAs 4X10<17>cm<-3> or higher in the impurity density of the n type layer 2 and the p type layer 31. The diode is biased in the reverse direction, tunnel- injected electrons generated near the maximum field strength region of p-n junction travel in the n type layer 2 at saturation speed and holes tunnel-injected travel in the p type layer 31 at saturation speed. Thus, negative resistance is obtained by travelling time effects. |
