METHOD OF PRODUCTION OF AN INSULATED GATE FIELD EFFECT TRANSISTOR,申请号EP19790400084-传众专利搜索

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发明名称	METHOD OF PRODUCTION OF AN INSULATED GATE FIELD EFFECT TRANSISTOR
摘要
申请公布号	EP0003926(B1)	申请公布日期	1981.09.30
申请号	EP19790400084	申请日期	1979.02.08
申请人	THOMSON-CSF	发明人	GILLES, JEAN
分类号	H01L29/08;H01L21/225;H01L29/10;H01L29/78;(IPC1-7):01L21/225;01L29/78	主分类号	H01L29/08
代理机构		代理人
主权项
地址

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