Method of depositing uniform films of SixNy or SixOy in a plasma reactor

摘要

A method of depositing a uniform dielectric film on a silicon substrate comprising flowing a plasma comprising an RF-excited mixture of an inert gas such as argon and silane over the substrate to form a film of porous a-SixHy over the surface of the substrate. The flow of plasma is then discontinued and a flow of a nitrogen or oxygen plasma is substituted therefor. The temperature of the substrate is increased to at least 360 DEG C. to diffuse-out hydrogen from the SixHy film on the substrate, each departing hydrogen atom leaving a dangling Si bond behind which combines with the activated oxygen or nitrogen thereby to form the desired dielectric film of formula SixNy or SixOy.