| 摘要 |
PURPOSE:To facilitate selection of the PIN layer structure, provide a high degree of freedom in the device design and improve efficiency of a solar cell by a method wherein a III-V group amorphous thin film and a layer made of a semiconductor material such as an amorphous silicon of the fluorine or hydrogen series are combined to constitute a thin film solar cell. CONSTITUTION:On a transparent glass substrate 1, a grid electrode Al/Ag2 is formed by evaporation using a mask, and an ITO transparent electrode 3 is formed into a given thickness by a sputtering apparatus. Then, the substrate 1 is set in a plasma CVD apparatus and treated by a high frequency to form a P<+> type a-BP film 4 into a given thickness in order to obtain a P type amorphous semiconductor. Subsequently, by plasma CVD, an I type a-Si:F:H film 5 is formed into a given thickness and moreover, an N type doping agent is added to form an N<+> type a-Si:F:H film 6 into a given thickness. Then, by an electron beam evaporation apparatus, a back surface electrode 7 is formed and finally, by a CCD apparatus, an Si-O-N film 8 is formed into a given thickness in order to achieve passivation for a solar cell. Thereby, selection of the PIN layer structure is facilitated. |
