| 摘要 |
PURPOSE:To prevent the contamination or damage of an exposed surface by providing blank chip sections on the element-formation face of an Si substrate wherein convex sections are formed in the blank chip sections to contact with exposed masks. CONSTITUTION:Photoetching is applied to a substrate 1 by using a photomask to make chip formation regions 2 and pedestal convex sections 3' are formed in blank chip regions 3. In this composition, a photoresist will equally be applied to the substrate 1 by rotating application. Then, with a normal exposed process by photomask performed, the masks will not contact with the resist but with the blank chip sections only and processes will be proceeded by always maintaining fixed intervals. Therefore, exposure will be possible at high yield with simple operation and without pattern damage caused by mask contact. |
