| 摘要 |
PURPOSE:To compact SiO2 film in a short time without influencing on an Si substrate by irradiating by CO2 lasers an SiO2 film on the substrate thermally treated after impurities are introduced. CONSTITUTION:Impurities are introduced to an Si substrate, the substrate is thermally treated and SiO2 is deposited by means of a CVD method. When the SiO2 is irradiated by laser beams, it is changed into compact SiO2. When the SiO2 is thermally treated by particularly using CO2 lasers at that time, injected ions are hardly activated, and the SiO2 can be compacted without influencing on the substrate. |
