发明名称 |
Complementary metal-oxide semiconductor |
摘要 |
A complementary metal-oxide semiconductor comprises at least one P channel MOSFET and at least one N channel MOSFET. In the semiconductor at least one additional doped portion is formed close to at least one of the P and N channel MOSFETs at a small part of the region which is driven by the voltage supply. The additional doped portion is directly connected to the voltage supply.
|
申请公布号 |
US4288804(A) |
申请公布日期 |
1981.09.08 |
申请号 |
US19790102017 |
申请日期 |
1979.12.10 |
申请人 |
FUJITSU LIMITED |
发明人 |
KIKUCHI, HIDEO;TAKAOKA, HARUYOSHI;BABA, SHIGENORI |
分类号 |
H01L27/08;H01L21/768;H01L23/522;H01L27/092;H01L29/78;H03K19/003;H03K19/0948;(IPC1-7):H01L27/02 |
主分类号 |
H01L27/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|