发明名称 GATE CIRCUIT OF GATE TURNNOFF THYRISTOR
摘要 PURPOSE:To reduce waste time ue to unevenness of the operating speed of switch elements by adding diodes to a part of the switch elements when GTO is turned on and off by selecting a plurality of semiconductor switch elements. CONSTITUTION:On the occasion that the switches 4-7 formed by the semiconductor switch elements and an impedance circuit 100 are provided between the gate 13 and a cathode 12 of GTO1 to give on-off control to GTO1, the device is formed with the diode 50 attached to between both ends of the switch 5. Accordingly, in the case when GTO1 is turned from the state ''on'' to that of ''off'', the switches 4 and 5 are opened and later the switch 6 or 7 is closed, and simultaneously reverse bias voltage generated by the charge of the capacitor 8 of the impedance circuit 100 is impressed on the gate 13 of GTO1. Therefore, the waste time is reduced and the state of ''off'' can be obtained speedily.
申请公布号 JPS56112873(A) 申请公布日期 1981.09.05
申请号 JP19800013047 申请日期 1980.02.07
申请人 TOYO ELECTRIC MFG CO LTD 发明人 MASUDA KAZUNORI;SANO TAKASHI
分类号 H02M1/06;H02M1/08;H03K17/732 主分类号 H02M1/06
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