发明名称 MEMORY CIRCUIT
摘要 PURPOSE:To enable to reduce the time required for generating and executing a program, and execute the processing at a high speed, by changing the polarity of an inversion control signal, outputting it by means of inversion of the polarity of a data in the designated memory element at the time of read-out, and inverting the polarity of the data by the same instruction. CONSTITUTION:A data of the address designated by an address signal which has been received through the address bus AB from the CPU is output to the data output terminal of the semiconductor static memory element 11. The polarity of data of this terminal is inverted by the inverter 12, it is connected to the negative side of the semiconductor switch circuit 14, and the output data of the element 11 is connected to the positive side of this circuit 14. Also, the AND gate 13 takes the logic of the address from the CPU, and the control signal READ from the address bus which is not used for carrying the address, and the inversion control signal 100 which has been output by the AND gate 13 is used for controlling the circuit 14. And, the polarity of the output data is inverted by the same instruction so that the memory circuit for which the microprocessor is used can be operated at a high speed.
申请公布号 JPS56110166(A) 申请公布日期 1981.09.01
申请号 JP19800011443 申请日期 1980.02.04
申请人 NIPPON ELECTRIC IND 发明人 SUGIMORI KATSUNOBU;OOKAWA TOSHIYUKI
分类号 G06F7/00;G06F1/02;G06F9/30;G06F9/305;G06F12/00;H03K19/173 主分类号 G06F7/00
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