Plasma etching of amorphous silicon (SE-35)

摘要

Amorphous silicon is selectively etched by concurrently exposing the silicon to a ionized plasma containing hydrogen and heating the silicon to a temperature of between about 150 DEG C. to about 350 DEG C. In one embodiment the selective etching technique is utilized to texture the surface of the amorphous silicon reducing the reflectivity thereof to less then about 5%.