| 摘要 |
PURPOSE:To facilitate ultrasonic bonding by a method wherein barrier forming metal is disposed first when making up a Schottky barrier, a polycrystal Si layer with an opening section is laminated on the metal directly or through a metallic layer for protecting the barrier metal, and an Al layer is built up on the Si layer, burying the inside of the opening section. CONSTITUTION:An upper section of a semiconductor substrate 21 is coated with an insulating film layer 2, an opening is bored, Schottky barrier forming metal 23 is disposed to the exposing substrate 21, a polycrystal Si layer 24 is grown on the whole surface containing the insulating film layer 2 and the metal 23 and a plurality of opening sections 25 sre drilled to the layer 24. An upper section of the layer 24 is covered with an Al layer 26, and Al is permeated into the opening sections 25 and contacted with the metal 23. Thus, an impact in the case when ultrasonic bonding is conducted to the Al layer 26 is reduced, and a diode having high reliability can be obtained at low cost. |
