| 摘要 |
A semiconductor device includes a silicon substrate having an insulating layer with a window. A silicon layer is deposited on the insulating layer and on the silicon substrate surface in the window. This silicon layer has n-type and p-type conductive layer parts which adjoin each other within the window and which each serve as both a connection conductor and an electrode of an active zone of the device. Semiconductor devices in accordance with the invention feature very small surface areas, and are thus particularly suitable for high frequency operation. |
