| 摘要 |
PURPOSE:To easily obtain longitudinal type SIT or longitudinal type FET of positional precision and fine dimensions by using anisotropic etching. CONSTITUTION:On an N<+> type Si substrate 12 to be a source region an N type layer 13 is made to grow epitaxially and on the region to form the cross section of the channel of SIT of FET an island-shaped SiO2 film 17 is formed. Next, with the film 17 used as a mask, within the layer 13 on both sides of the film 17 a shallow P<+> type region 14 is formed diffusely, and on the film 17 an from the end part of the film 17 to the end part of the region 14 and further on the region 14, makss 81, 84 and 85 formed of Si3N4 respectively are provided. After that, etching is conducted by using anisotropic etching liquid to make a V-shaped groove intruding into the region 13 in the region 14 between the masks 84 and 85, while the layer 13 is made into a mesa-shaped layer 13a. In this way, the regions 14 on both sides of the V-shaped groove are used for a P<+> type gate region 14 and a P<+> type emitter region 15, respectively, the film 17 under the mask 81 is subjected to side etching, and within the layer 13a thus exposed an N<+> type drain region 11 is formed diffusedly. |
