COMPOSIT GATE INTERCONNECT STRUCTURE

摘要

A composit gate/interconnect structure (36) is formed by interleaved layers of polycrystalline silicon (28) and a refractory metal (26) selected from the group consisting of molybdenum, tungsten, platinum and titanium. The combination of a refractory metal such as molybdenum with polycrystalline silicon produces a stable gate material having low resistivity which can be formed by simple fabrication processes in the construction of high speed MOS devices.