发明名称 MICROWAVE PLASMA TREATING APPARATUS
摘要 PURPOSE:To maintain sufficient airtightness in a plasma treating chamber contained in a cavity chamber in the microwave plasma treating apparatus for a long period of time by arranging a cooling air diffuser at a packing inserted between the treating chamber body and a cover plate for cooling the packing. CONSTITUTION:The quartz treating chamber 1 is contained in the cavity chamber 8 having an antenna 9 on a ceiling while an exhaust port 2 and a gas supply port 3 provided at the chamber 1 are projected out of the chamber 8. This chamber 1 is formed of its body and a cover plate 4 for placing the semiconductor wafer 6, and an O-ring packing 5 formed of fluorine rubber is interposed at the contacting part therebetween to be airtight thereat. In this configuration an annular cooling gas diffuser 7 is provided around the peripheral edge of the cover plate 4 and the collar of the body for nipping the packing 5 is also provided. Cooling gas such as N2, Ar or the like is diffused toward the packing 5, thereby cooling the packing 5. Thus, the temperature rise of the packing 5 can be suppressed.
申请公布号 JPS5696842(A) 申请公布日期 1981.08.05
申请号 JP19790172906 申请日期 1979.12.28
申请人 FUJITSU LTD 发明人 YANO HIROSHI;ITOGA MASANAO
分类号 H01L21/302;C23C14/56;H01J37/02;H01J37/18;H01L21/3065 主分类号 H01L21/302
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