| 摘要 |
PURPOSE:To obtain the stable lateral mode in the light emitting device wherein a light confining layer is embeded in a clad layer which holds an active layer in- between with a stripe region being remained, by controlling the diffusion of lateral carriers by the P-N junctions formed in an active layer. CONSTITUTION:On an N type InP substrate 1, are layered an N type InP clad 2, a nonadded InGaAsP active layer 3, a P type InP clad 4, an N type InGaAsP light confining layer 5. Then, by using an SiO2 mask, the layer 5 is etched 5A in a stripe shape with a blended liquid of H2O2-H2SO4-H2O. Thereafter, P type InP clad layer 6 and P type InGaAsP 7 are layered. As impurities, Te is used for the layers 2 and 4, Cd for the layer 5, and a large amount of Zn for the layers 6 and 7. Therefore, only the part 3A of the active layer is transformed into P type by Zn and the P-N junction is formed between the part 3B and said part 3A. An electrode 8 is made of Au-Zn and an electrode 9 is made of Au-Ge-Ni. In this constitution, even though the stripe width is narrow, the threshold current can be sufficiently decreased, the confinement of the light is excellent, and the lateral mode can be stabilized. |
