发明名称 METHOD FOR PATTERN FORMATION
摘要 <p>PURPOSE:To reduce the process of work as well as to cut down the cost price by a method wherein the resist which was used for the formation of marks is made usable again for the formation of device patterns by forming metal marks with plating. CONSTITUTION:A positive type resist 3 is applied and baked on the metal conductive layer 2 of a substrate 1. Then a concaved section 4, having the exposed layer 2, is formed by performing the exposure and developing processes of the mark pattern and then removing the resist from the section where the mark will be formed. Then a metal mark 5 is formed on the concaved section 4 by performing plating. Then the device pattern is positioned on the resist 2 and a resist pattern 6, whereon the resist on the section corresponding to the device pattern has been removed by exposure and developing the device pattern, is formed. As a result, the resist which was used for the mark can be used again for the formation of the device pattern, without exfoliation, thereby allowing to reduce the process of work as well as to cut down the cost price.</p>
申请公布号 JPS5693320(A) 申请公布日期 1981.07.28
申请号 JP19790169162 申请日期 1979.12.27
申请人 FUJITSU LTD 发明人 YAMAGISHI FUMIO;KIMURA YUUJI
分类号 H01L21/027;H01L23/544 主分类号 H01L21/027
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