| 摘要 |
PURPOSE:To obtain the level surface of the conductor pattern for the subject device by a method wherein a gin, having almost equal etching rate to the insulating layer on the conductor pattern or the conductor layer on the insulating layer, is used. CONSTITUTION:On the whole surface of conductor pattern 33 formed on a crystalline substrate 31 through the intermediary of an insulating layer 32, an SiO2 layer 34 is formed using a sputtering method. Then the resin 35 having the equal etching rate to the layer 34 is selected and applied on the layer 34 evenly. And, a level conductor pattern 33 is formed by performing an ion etching or a gas plasma etching. Also the selected resin 45 is applied on the conductor layer 44 formed on the crystalline substrate 41 through the intermediary of an SiO2 layer 42, and then the level conductor pattern 44 can be formed by performing a gettering. |
