| 摘要 |
PURPOSE:To stabilize characteristics and raise reliability by forming a metallic film over the surface of an Si substrate with a polycrystalline Si layer provided therebetween and a silver plating electrodes thereon. CONSTITUTION:P-diffusion is made on the surface of an n type monocrystalline Si substrate 5 using an oxide film 6 as mask and a poly-Si layer 9 is formed over the whole surface of the diffusion. Next, a contact is made by spattering or depositing a metal 10 such as Au-Ga on a poly-Si layer. Thereafter the unnecessary portion of Au-Ga film is removed by photo-etching. Next, an Ag bump electrode 11 is formed through electric Ag plating using the Au-Ga film as anode. Thereby, the reactive alloying of Poly-Si-metal progresses so that sufficient bump strength can be obtained. |
