| 摘要 |
PURPOSE:To improve the fall characteristics of word lines by providing discharge paths to the word lines of the matrix arrays connecting the memory cells of an I<2>L with the word lines consisting of semiconductor crystals. CONSTITUTION:The word discharge paths [in which diodes D connected with resistances (r) in series] of semiconductor devices in which the memory cells of an I<2>L are connected by the word lines W- consisting of semiconductor crystal to form an array and a plurality of such arrays are provided to array the memory cells in matrix are provided, whereby discharge current ID is shunted and flowed. As a result, the response of the fall characteristics of the word lines W- is reduced and the high-speed read-out and error write-in are prevented. The write-in current IW which flows at the time when the memory cells disposed adjacently to the discharge paths are selected may be shunted by the combination provision of the memory cells and dummy cell DCe of specified value to the parts provided with the discharge paths, whereby the write-in characteristics may be made uniform. |
