| 摘要 |
PURPOSE:To provide a compound semiconductor device having a superior productive film by a method wherein GaAs is selectively oxidized with a patterned metal mask, a part of it is made to be Al2O3, its surface is protected and the remaining part is formed with hetero-junction with GaAs of the base material. CONSTITUTION:GaAs 2, AlAs 3 and Al 4 are vapour deposited in sequence on GaAs base plate 1, and then Au 5 is vapour deposited. Au 5 is patterned to make a mask 5a, the layers 4 and 3 are ion etched, AlAs 5 is selectively oxidized at about 200 deg.C in N2 with 10% of O2 to make Al2O3 6. A proper selection of the conductive layers 1-3 causes a diode to be formed and a circumference around the junction is proted by Al2O3. Even if the assembly is of mesa type a generation of the leak current may sufficiently be prevented, both a hetero junction and a surface protection film may be formed simultaneously, so that this assembling process is effective for distributing an application of the compound semiconductor element. |
