| 摘要 |
PURPOSE:To effectively protect the surface of a plurality of strain resistance elements formed by diffusing on the surface of a semiconductor substrate by forming a resion covering layer only the peripheries of the elements when protecting the elements with the layer and covering the entire surface including the layer with fluorine resin film. CONSTITUTION:A recess 2 is formed at the center on the back surface of an N type Si substrate 1 by etching, and a plurality of P type strain resistance elements 4 are diffused in the thin part 3 formed on the surface thereof. Subsequently, an SiO2 film 12 is covered on the entire surface of the side, a window is opened corresponding to the element 4, an aluminum electrode 5 contacting with the element 4 is covered while extending on the film 12, and an Au lead wire 9 is connected to the end thereof. Thereafter, a substrate 8 having a window corresponding to the recess 2 on the back surface of the substrate 1 is bonded through a crystallized glass plate 6, a lead frame 7 is arranged on the elements 4, and is connected as prescribed. Then, a resin covering layer 10 is formed only on the periphery of the element 4, and the layer 10 and the element 4 are all protected by the fluorine resin covering layer 11. |
