发明名称 COMPENSATION OF CHANGES IN MEMS CAPACITIVE TRANSDUCTION
摘要 A method for compensating for strain on a MEMS device includes generating a signal indicative of a strain on the MEMS device in a first mode of operating a system including the MEMS device. The method includes compensating for the strain in a second mode of operating the system based on the signal. Generating the signal may include comparing an indicator of a resonant frequency of the MEMS device to a predetermined resonant frequency of the MEMS device. Generating the signal may include comparing a first output of a strain-sensitive device to a second output of a strain-insensitive device and generating an indicator thereof. Generating the signal may include sensing a first capacitive transduction of strain-sensitive electrodes of the MEMS device in the first mode and generating the signal based thereon. The strain-sensitive electrodes of the MEMS device may be disabled in the second mode.
申请公布号 US2014253219(A1) 申请公布日期 2014.09.11
申请号 US201313786686 申请日期 2013.03.06
申请人 SILICON LABORATORIES INC. 发明人 Caffee Aaron;Quevy Emmanuel P.
分类号 B81B7/00 主分类号 B81B7/00
代理机构 代理人
主权项 1. A method of compensating for strain on a microelectromechanical system (MEMS) device comprising: generating a signal indicative of a strain on the MEMS device in a first mode of operating a system including the MEMS device; and compensating for the strain in a second mode of operating the system based on the signal.
地址 Austin TX US