发明名称 SYSTEMS AND METHODS FOR PROVIDING LOW-PASS FILTERING
摘要 A low-pass filter circuit is described. The low-pass filter circuit includes a pseudo-resistor. The pseudo-resistor includes at least one metal-oxide-semiconductor field-effect transistor. The at least one metal-oxide-semiconductor field-effect transistor receives a digital power supply domain signal. The low-pass filter circuit also includes a capacitor. The capacitor is coupled to the pseudo-resistor. The capacitor provides a filtered signal. The low-pass filter circuit may pass digital signal transitions and provide low-pass filtering when there is no signal transition.
申请公布号 US2014253206(A1) 申请公布日期 2014.09.11
申请号 US201313794066 申请日期 2013.03.11
申请人 QUALCOMM INCORPORATED 发明人 Tang Yi;Sun Bo
分类号 H03H11/04 主分类号 H03H11/04
代理机构 代理人
主权项 1. A low-pass filter circuit, comprising: a pseudo-resistor comprising at least one metal-oxide-semiconductor field-effect transistor that receives a digital power supply domain signal; and a capacitor coupled to the pseudo-resistor, wherein the capacitor provides a filtered signal, wherein the pseudo-resistor comprises a p-channel metal-oxide-semiconductor field-effect transistor and an n-channel metal-oxide-semiconductor field-effect transistor, wherein a source of the p-channel metal-oxide-semiconductor field-effect transistor is coupled to a source of the n-channel metal-oxide-semiconductor field-effect transistor, a drain of the p-channel metal-oxide-semiconductor field-effect transistor is coupled to a drain of the n-channel metal-oxide-semiconductor field-effect transistor, a gate of the p-channel metal-oxide-semiconductor field-effect transistor is coupled the drain of the p-channel metal-oxide-semiconductor field-effect transistor, and a gate of the n-channel metal-oxide-semiconductor field-effect transistor is coupled to the drain of the n-channel metal-oxide-semiconductor field-effect transistor.
地址 San Diego CA US