| 摘要 |
<p>PURPOSE:To make a GaAs Shottky barrier diode of high detection sensitivity realizable, by forming a film of a first metal, whose compound is much formable by heat diffusion to a compound semiconductor, on the compound semiconductor and serially forming a film of a second metal, whose compound is less formable, on the first metal film, and by performing an annealing process. CONSTITUTION:A Shottky contact hole is formed in an insulation film 2 on a compound semiconductor substrate 1. For example, n-type GaAs is used in this compound semiconductor. A first metal, whose compound is much formable by heat diffusion to the compound semiconductor, is laminated in a filmy state on the surface of the compound semiconductor inside the Shottky contact hole, so that a first metallic film 6 is formed. For example Pt is used as the first metal. In succession, a second metal, whose compound is less formable by the heat diffusion to the compound semiconductor, is laminated on the surface of the first metallic film more largely in thickness than the first film, so that a second metallic film 7 is formed. For example Mo is used as the second metal. Afterwards an annealing process is performed. A compound semiconductor device or the like with a forward bias made unnecessary and with a small Shottky barrier height can be manufactured accordingly.</p> |
