| 摘要 |
PURPOSE:To enhance the transfer efficiency of a charge transfer element by forming a number of electrodes through an insulating film on a semiconductor substrate as a charge transfer element and forming thereat a recess portion on the channel region under the respective electrodes, thereby increasing the substantial length of the gate. CONSTITUTION:Transfer stage rows 1 and 2 are arranged in parallel with one another on a semiconductor substrate, photodiodes 3-8 are formed therebetween, and a charge transfer element used for scanning circuit of a solidstate image ickup device or the like is formed. Since the transfer stages are formed in the same configuration, one transfer stage will be described. Diffused layers 12-13 are formed on the substrate, a gate oxice film 18 is covered on the entire surface including the layers 12- 13, polycrystalline silicon gates 9-11 are covered on the film 18 between the diffused layers over the periphery of the adjacent diffused layers, and are used as transfer means. In this configuration, the surface of the substrate is not formed flat, but the channel region of the surface of the substrate corresponding to the gates 9-11 is formed in recess shape. Thus, it can reduce the affect of imparting to the gate length of depletion layer based on a signal charge. |
