PRODUCTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a plated layer on a conductor substrate by estimating the thickness of an insulating film observing the plated surface of a monitoring opening. CONSTITUTION:A hole 3 of a diameter D is made in an insulating film 2 on a semiconductor substrate 1 and plated. This allows one to observe a concentric circle whose diameter (d) gradually reduces with an increase in the thickness thereby enabling the estimating of the thickness in a nondestructive manner. When the thickness of a plated film ranges from several thousand Angstrom -1mum, a highly accurate estimation can be done up to a circular hole diameter 4-6mum while the relationship between d/D and the thickness varies slightly yet evenly. Such a very simple method enables formation of a plated film on a substrate 1 at a required opening with the thickness the same as that of the monitoring plated film.