发明名称 |
METHOD OF CHEMICALLY VAPOR ADHERING |
摘要 |
The films (10) are formed on a substrate (9) by means of chemical vapor deposition where a gas atmosphere containing at least one silane or germane of a higher order is used. The gases forming the gas atmosphere are supplied to a region adjacent to the substrate (9) and an excitation energy is applied to those gases preferably with a glow discharge being generated. At least when the gas atmosphere additionally contains a gas reacting with the silane or the germane respectively the pressure of the reactive gases is kept below 0.133 mbar. …<??>The films (10) formed consist of silicon or germanium respectively, or of compounds or alloys of these elements with oxygen, nitrogen, carbon and boron depending on the nature of the additionally available reactive gases. The films (10) preferably hydrated are useful in semiconducting devices. |
申请公布号 |
JPS5683929(A) |
申请公布日期 |
1981.07.08 |
申请号 |
JP19800129402 |
申请日期 |
1980.09.19 |
申请人 |
IBM |
发明人 |
MAAKU HAABAATO BUROTSUDOSUKII;DENISU KURINTON GURIIN;JIYOSEFU ARUBAATO KATSUKUZA;RICHIYAADO MAIKERU PURESENITSU;BURUUSU ARUBAATO SUKOTSUTO |
分类号 |
H01L31/04;C23C16/06;C23C16/24;C23C16/32;C23C16/34;C23C16/40;H01L21/205;H01L21/314;H01L21/316;H01L21/318 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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