SEMICONDUCTOR ANNEALING TREATMENT

摘要

A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 600 DEG C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device (17) may be heated on a graphite element (14) mounted between electrodes (15) in an inert atmosphere in a chamber (11). The process may be enhanced by the application of optical radiation from a Xenon lamp (19).