| 摘要 |
<p>PURPOSE:To decrease parasitic capacity without hindering the light shielding effect from an upper electrode side and to prevent unequal brightness by dividedly providing light shielding films. CONSTITUTION:After a passivation film 8 is formed, Al is deposited as the metal for the light shielding films thereon by sputtering or vapor deposition, etc., and is photoetched by which the desired light shielding film 9 and the auxiliary light shielding films 10, 10' are formed. The film 9 is formed to the size larger than a TFT channel length and the films 10, 10' are formed to the size to completely cover a-Si patterns. The parasitic capacity is decreased and the unequal brightness in the upper and lower part of the image plane is decreased by dividing the light shielding films 9, 10, 10' in such a manner.</p> |
