| 摘要 |
The method for making a reliable bonding of the lead wire can be used in the process of the hybrid IC fabrication. After resistive layer(12), conductive layer(13) and chrome alloy layer(14) are deposited on the substrate(11) by sputtering method in its order, chrome layer is selectively etched by using a plating resist(15), and after gold plating layer(16) is formed on the selected conductive layer, the plating resist is removed. After the three layers(12,13,14) are continously etched to form desired patterns, a part of the Cr layer and conductive layer is etched again to expose the part of resistive layer(17), and SiO protective films(18) are deposited on the resistive layer(17). After the semiconductor chip is bonded on the plating layer, lead wire(20) is bonded on another plating layers.
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