| 摘要 |
PURPOSE:To enhance the uniformity of the dry etching without reducing the etching speed, selectivity ratio (a ratio of the etching speed between those for the silicon oxide and for the silicon substrate in the silicon substrate for a semiconductor device) and the like by changing the shape of an electrode confronting the work to be processed in accordance with the shape of the member to be worked and carry ing out the etching by a reaction gas. CONSTITUTION:Reaction gas such as fluorocarbon and chlorocarbon is introduced into a cylindrical container 1 from a gas introduction tube 2. Turning on high frequency power source 8, etchant such as CF 3 of relatively short life is produced between opposed electrodes 5' and 7 and material 9 to be worked on a lower electrode 7 is subjected to dry etching. At this time, the part of the upper electrode 5' corresponding to the material 9 to be worked is bent upward correspondingly to the thickness of the material to be worked, thereby the uniformity of the dry etching being increased. |
