| 摘要 |
PURPOSE:To prevent the change of trigger current by a method wherein an SiO2 film on an emitter and a base on both sides of an emitter juncion is narrowly removed in parallel with the emitter junction, and the surface of the SiO2 film sandwiched between the removed parts is coated with glass. CONSTITUTION:A P layer 2 and an N layer 3 are selectively formed on an n type Si substrate, and the emitter junction touches an SiO2 film in a part 5. After etching the surface layer to make a mesa groove 4, the SiO2 film on an emitter 3 and a base 2 located on both sides of the emitter junction is removed through pnotographic etching in such a way that removed parts are in parallel with the emitter junction. If the exposed Si part is coated with glass through the electrophoresis method by so arranging that the half width of the SiO2 film on the emitter junction is equal to a third or less than that of a glass film after its calcination, a glass protective film is obtainable on the main junction and the surface part of the emitter junction 8, 9 at one time. An opening is selectively made in the SiO2 film to attach electrodes 10- 12. This consitituion makes it possible to reduce the current as an important factor of the gate trigger current flowing in the surface layer, together with superior reproducibility. |
