发明名称 TREATMENT IN GASEOUS PHASE REACTION
摘要 PURPOSE:To facilitate the adjustment of the position for the detection range, enhance the uniformness of formed film, and to reduce number of defects by using an optical fiber to introduce laser beam into a reaction furnace when detecting fine particles in the reaction gas in a gaseous phase reaction furnace. CONSTITUTION:In the treatment performed in gaseous-phase reaction process for a semiconductor substrate etc., a fine optical fiber 7 that will not disturb the reaction system is inserted into the gaseous-phase reaction area in the reaction tube 1. A laser beam is sent from the laser generator 6 through the fiber 7 so that it crosses the gas-phase reaction gas, and light scattered by fine particles is taken out through an optical fiber 8. This is used for continuous monitoring of total number and distribution of particle size in the reaction gas. In this manner, the reaction is controlled to limit the size of formed particles to less than 0.1mum and thus contributes to provide a formed film with enhanced uniformness and reduced defects.
申请公布号 JPS5660638(A) 申请公布日期 1981.05.25
申请号 JP19790135160 申请日期 1979.10.22
申请人 HITACHI LTD 发明人 MATSUKUMA KUNIHIRO
分类号 B01J19/12;H01L21/205 主分类号 B01J19/12
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