| 摘要 |
<p>PURPOSE:To perfectly correct the pinhole of a hard mask for manufacturing LSI, etc. in a short time by making a pinhole correcting window in the 1st resist layer, covering the whole surface of the mask with a correcting material, and forming the 2nd resist layer on the window part. CONSTITUTION:Positive resist layer 4 is applied to the whole surface of Cr mask layer 2 having pinhole 3 on glass substrate 1, the position of pinhole 3 is detected, and a resist layer part covering pinhole 3 is irradiated with ultraviolet rays 5 or the like. The exposed part is then removed by development to make correcting window 6, and the whole surface of the mask is covered with correcting material layer 7 by the vapor deposition of Cr or other method. The 2nd resist layer 9 is stuck to the region of window 6. Disclosed layer 7 is removed by using layer 9 as a mask, and layers 9, 4 are removed to leave correcting material layer 8 on the pinhole 3 part. Thus, layers 4, 9 are removed after removing the disclosed part of layer 7, so a shorter lift-off time is required. Since a brush, etc. are not used, the mask is not damaged.</p> |
