| 摘要 |
PURPOSE:To facilitate manufacture of a target and improve sensitivity and residual image characteristic by coating the photoconductive film consisting of noncrystalline silicon layer in which the impurities for increasing energy band gap are doped, onto a light transmitting electrode and varying the width of gap in the direction of thickness. CONSTITUTION:Onto the inner surface of a light transmitting substratum, for example of a glass face plate 3, a transparent electrode 8 is coated, and onto the electrode 8, the noncrystalline silicon layer having high specific resistance as a photoconductive film 9 is deposited. Onto this photoconductive film 8, an electron beam landing layer 10 is deposited. In the noncrystalline silicon layer as the photoconductive film 9, the impurities which increases the band gap of silicon, such as N, O, C, and H are doped, and the concentration of the impurities is increased toward the transparent electrode 8 side gradually, and the width of band gap is increased gradually toward the electrode 8 side. |
