| 摘要 |
PURPOSE:To stabilize an element by hardening the fixing with an SiO2 layer, a Si3N4 layer and a wiring layer or others provided under a protective layer by a method wherein the surface of the semiconductor element is coated by a carbon fluoride polimer in the case of the protective layer is arranged on the surface of the semiconductor element. CONSTITUTION:The treatd seimconductor substrate 2 which to be coated (CF)n is arranged in a reactor pipe 1, within the pipe 1 is exhausted and the compound of an acetylane gas and a fluorine gas is sent into it. Next thereto, the pressure in the pipe 1 is set about 1 Torr, and the high frequency electric power is applied to a coil 3 provided at the outer periphery of the tube 1 to make a plasma produce in the tube 1, and make react a acetylene and a fluorine to produce (CF)n on the substrate 2. Thus, by providing the (CF)n layer 14 on the SiO2 film 15 coated on the substrate 11, on the prescribed shaped metal layer 13 provided thereupon and on the polyamide layer 15 coverted the above, the protective film having an excellent repellent and antipharmacy charactersitic can be obtained and the semiconductor device can be stabilized. |
