发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the disconnection by a method wherein a nitrided film is laminated on an oxidized film, an etching is performed to make an opening, further the oxidized film is laminated therupon and a larger opening is made. CONSTITUTION:The oxidized film 11 and the nitrided film 12 are laminated on a substrate 10, a resist mask 14 is arranged thereupon and the etching is performed to make the opning. Next thereto, after the oxidized film 15 is laminated, the resist mask 16 is coated thereupon and the etching is made. At this time, the etching removed portion is only the oxidzed film 15, further at the etching removed portion in the oxidized film 11, there is the oxidized film 15, so that the oxidized film is not etched at the side phase. Accordingly, when the second opening is made larger, the step difference at the opening portion can be reduced practically, thus the disconnection can be prevented.
申请公布号 JPS5642345(A) 申请公布日期 1981.04.20
申请号 JP19790117571 申请日期 1979.09.13
申请人 SUWA SEIKOSHA KK 发明人 KODAIRA TOSHIMOTO
分类号 H01L21/306;(IPC1-7):01L21/306 主分类号 H01L21/306
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