| 摘要 |
PURPOSE:To reduce the area of a semiconductor substrate by forming picture elements of a pair of adjacent insulating gate electrodes to each other, arranging them in matrix state on the surface of the multiple element semiconeductor substrate as a photoelectric converter, and rendering the thickness of an insulating film under at least one electrode to be irregular. CONSTITUTION:An electrode for removing a background signal normally provided with picture elements forming a CCD is omitted, and only a pair of gate electrodes Ex, Ey using Si or the like passing infrared rays are used. At this time the electrode Ex is formed with two portions (a), (b) isolated at different distance form a substrate 40, and a pair of electrodes Ex, Ey are connected to buses 21, 17 respectively. That is, an insulating film 29a under the portion (a) of the electrode Ex is increased in thickness, and an insulating film 39b under the portion (b) is formed in the same thickness as that of the insulating film 39 under the electrode Xy. Thus, a cut-off function can be provided while eliminating the electrode for removing the background signal, namely, the electrode for cutting off with a simple configuration, and the area of the substrate can be reduced. |
