| 摘要 |
PURPOSE:To enhance the light pickup efficiency of the semiconductor light emitting device by forming a groove on the surface of a semiconductor substrate, epitaxially growing a Ga1-xAlxAs layer gradually reducing the x value on the entire surface, providing a light emitting unit on the portion having small x value, and irradiating light therefrom the groove while bending corresponding to the variation of the x value. CONSTITUTION:A hemicircular groove is opened at the center on the surface of an n type GaAs substrate 21, and an n type Ga1-xAlxAs layer 22 is epitaxially grown while gradually reducing the x value on the entire surface including the groove. Then, Zn is diffused partly on the surface of the layer having low x value to form a p type region 23, an insulating film 24 such as SiO2 is covered on the other surface while exposing the region 23, a p-side electrode 25 making contact with the region 23 is covered while extending thereon, and an n-side electrode 26 is covered on the back surface of the substrate 21. Thus, the light from the p-n junction formed between the region 23 and the layer 22 is bend correspondingly to the x value along the groove into the optical fiber 27 confronted with the groove. |
